 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PD 9.1377 PRELIMINARY Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. IRLI3103 HEXFET (R) Power MOSFET VDSS = 30V RDS(on) = 0.014 ID = 38A Absolute Maximum Ratings Parameter ID @ T C = 25C ID @ T C = 100C IDM PD @T C = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 38 27 220 38 0.25 20 240 34 3.8 2.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient Typ. --- --- Max. 4.0 65 Units C/W IRLI3103 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C Min. 30 --- --- --- 1.0 23 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.037 --- --- --- --- --- --- --- --- --- --- --- 9.0 210 20 54 Max. Units Conditions --- V VGS = 0V, I D = 250A --- V/C Reference to 25C, I D = 1mA 0.014 VGS = 10V, I D = 23A 0.019 VGS = 4.5V, I D = 19A 2.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 34A 25 VDS = 30V, VGS = 0V A 250 VDS = 24V, VGS = 0V, T J = 150C 100 VGS = 20V nA -100 VGS = -20V 50 ID = 34A 14 nC VDS = 24V 28 VGS = 4.5V, See Fig. 6 and 13 --- VDD = 15V --- ID = 34A ns --- RG = 3.4, VGS = 4.5V --- RD = 0.43, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH from package 7.5 --- and center of die contact 1600 --- VGS = 0V 640 --- VDS = 25V pF 320 --- = 1.0MHz, See Fig. 5 12 --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 81 210 38 A 220 1.3 120 310 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, I S = 23A, V GS = 0V TJ = 25C, I F = 34A di/dt = 100A/s Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 15V, starting T J = 25C, L = 300H R G = 25, IAS = 34A. (See Figure 12) ISD 34A, di/dt 140A/s, V DD V(BR)DSS, T J 175C Pulse width 300s; duty cycle 2%. t=60s, =60Hz Uses IRL3103 data and test conditions IRLI3103 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 1000 ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 100 100 10 10 2.5V 2.5V 1 0.1 20s PULSE WIDTH T J = 25C 1 10 A 100 1 0.1 20s PULSE WIDTH T J = 175C 1 10 A 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics, TJ = 25oC Fig 2. Typical Output Characteristics, TJ = 175oC 1000 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 56A I D , Drain-to-Source Current (A) TJ = 25C 100 1.5 TJ = 175C 1.0 10 0.5 1 2.0 3.0 4.0 5.0 V DS = 15V 20s PULSE WIDTH 6.0 7.0 8.0 9.0 A 0.0 -60 -40 -20 0 20 40 60 VGS = 10V 80 100 120 140 160 180 A VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRLI3103 3200 2800 Ciss VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 15 I D = 34A V DS = 24V V DS = 15V 12 C, Capacitance (pF) 2400 2000 1600 1200 800 400 0 1 10 100 Coss 9 6 Crss 3 A 0 0 10 20 30 FOR TEST CIRCUIT SEE FIGURE 13 40 50 60 70 A VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10s 100 100s 100 TJ = 175C TJ = 25C ID , Drain Current (A) 1ms 10 10ms 10 0.4 0.8 1.2 1.6 2.0 VGS = 0V 2.4 A 1 1 T C = 25C T J = 175C Single Pulse 10 A 100 2.8 VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRLI3103 VDS 40 RD VGS RG D.U.T. VDD ID, Drain Current (Amps) 30 5.0V Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 0 25 50 75 100 125 150 A 175 TC , Case Temperature (C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 PD M 0.1 0.02 0.01 t 1 t 2 SINGLE PULSE (THERMAL RESPONSE) N otes : 1 . D uty fac tor D = t 1 /t 2 0.01 0.00001 2. P ea k T J = P D M x Z thJ C + T C A 10 0.0001 0.001 0.01 0.1 1 t 1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRLI3103 EAS , Single Pulse Avalanche Energy (mJ) 600 TOP 500 BOTTOM ID 14A 24A 34A 400 10 V 300 Fig 12a. Unclamped Inductive Test Circuit 200 100 0 VDD = 15V 25 50 75 100 125 150 A 175 Starting TJ , Junction Temperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms 5.0 V Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRLI3103 Peak Diode Recovery dv/dt Test Circuit D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer RG * * * * dv/dt controlled by R G Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD * * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRLI3103 Package Outline TO-220 Fullpak Outline Dimensions are shown in millimeters (inches) 10.60 (.417) 10.40 (.409) o 3.40 (.133) 3.10 (.123) -A3.70 (.145) 3.20 (.126) 4.80 (.189) 4.60 (.181) 2.80 (.110) 2.60 (.102) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 7.10 (.280) 6.70 (.263) 16.00 (.630) 15.80 (.622) 1.15 (.045) MIN. 1 2 3 NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982 2 CONTROLLING DIMENSION: INCH. 3.30 (.130) 3.10 (.122) -B13.70 (.540) 13.50 (.530) C D A 1.40 (.055) 3X 1.05 (.042) 2.54 (.100) 2X 0.90 (.035) 3X 0.70 (.028) 0.25 (.010) M AM B 3X 0.48 (.019) 0.44 (.017) B 2.85 (.112) 2.65 (.104) MINIMUM CREEPAGE DISTANCE BETWEEN A-B-C-D = 4.80 (.189) Part Marking Information TO-220 Fullpak EXAMPLE : THIS IS AN IRFI840G WITH ASSEMBLY LOT CODE E401 A INTERNATIONAL RECTIFIER IRFI840G LOGO E401 9245 PART NUMBER ASSEMBLY LOT CODE DATE CODE (YYWW) YY = YEAR WW = WEEK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 713215 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: ++ 81 3 3983 0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: ++ 65 221 8371 Data and specifications subject to change without notice. 11/95 |
Price & Availability of IRLI3103
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |